Switching and analog performance of 0.6 volt, 20 nm effective channel length Si ASIC Dual Carrier Field Effect Transistor and three dimensional field effect transistor

Theoretical studies of switching and analog performance of 0.6 volt 20 nm effective channel length Si ASIC of Dual Carrier Field Effect Transistor and Three Dimensional Field Effect Transistors will be presented. It will be shown that these field effect transistors can be fabricated by using mature semiconductor technology for linewidth greater than 130 nm.