Measuring and fitting the MOS transistor at high frequencies

A novel small-signal model of a MOS transistor is presented, which is valid at frequencies around the unity gain frequency. As a major advantage compared with earlier models, this novel model takes into account the nonquasistatic and transmission-line effects of the transistor. By using S-parameter measurements, computer-controlled calibration techniques of the test setup and network analyzer, mathematical transformations and fit routines, all the AC parameters can be extracted from the measured data. The obtained model parameters are used in the design of a high-frequency circuit to prove the validity of the model as well as the measurement method.<
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