Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

In this letter, the ferroelectric characteristics and reliability of TiN/Hf
_0.5
Zr
_0.5
O
₂
/TiN Metal-Ferroelectric-Metal (MFM) capacitor fabricated using the
‘‘in-situ’’
like consecutive atomic layer deposition (
C-ALD
) and the
“ex-situ”
deposition techniques are compared for different post metal annealing (PMA) temperatures. We suggested that
C-ALD
deposition improves the interface of the ferroelectric HZO film and the higher PMA temperature further improves the crystal quality. We found that
wake-up
tends to happen for both types of samples with lower PMA temperature, indicating the possible higher dependence of
“wake-up”
on crystallinity. Nevertheless,
C-ALD
and higher PMA temperature are both required to prevent early breakdown.
C-ALD
samples combined with 600 °C PMA showed the excellent remanent polarization (2P
_r
) of 53 μC/cm
²
, endurance properties of 10
¹¹
cycles, and outstanding time-dependent dielectric breakdown (TDDB) characteristics.