Some measurement results for frequency-dependent inductance of IC interconnects on a lossy silicon substrate

Frequency dependent measurements of scattering (S) parameters using a vector network analyzer (VNA) have been performed on IC interconnects on a lossy silicon substrate. The multiline calibration method has been used to perform the de-embedding of the line parameters, from which the line inductance is extracted. A highly accurate closed-form approximation for frequency-dependent impedance per unit length of a lossy silicon substrate for IC interconnects has been used to compare with the measurements performed.