Positive flatband voltage shift in MOS capacitors on n-type GaN

GaN MOS capacitors were fabricated using silicon dioxide deposited by low-pressure chemical vapor deposition oxide at 900/spl deg/C. The MOS capacitor flatband voltage shift versus temperature was used to determine a pyroelectric charge coefficient of 3.7 /spl times/ 10/sup 9/ q/cm/sup 2/-K, corresponding to a pyroelectric voltage coefficient of 7.0 /spl times/ 10/sup 4/ V/m-K.