Linear cofactor difference method of MOSFET subthreshold characteristics for extracting interface traps induced by gate oxide stress test

A new subthreshold analysis technique, the linear cofactor difference method, is presented in this brief for extraction of the MOSFET interface traps induced by the gate oxide stress test. This technique relies on new linear cofactor difference extreme spectral characteristics of MOSFET gate voltage in the subthreshold region. It is shown that this method enables reliable extraction of the increased interface traps with a rise of the accumulated gate oxide stress test time to be obtained and that its validity is also verified by the extraction experiments on an n-channel MOSFET (nMOST) device.