Monte Carlo simulation of ion implantation (3-dimensional) and defect modeling during implantation process

In this paper, we report a new computationally efficient three-dimensional Monte Carlo simulator for ion implantation into topographically complex structures. Significant improvement of CPU time over previous simulators has been achieved. Both the Kinchin-Pease (KP) and the Kinetic Accumulative Damage Model (KADM) have been incorporated into this new simulator. Based on KADM, detailed defect information, such as cluster size, type, distribution and End-Of-Range (EOR) defects could be obtained.