Accurate Quantum Transport Modeling of High-Speed In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunneling Diodes

In this article, we demonstrate a reliable physics-based simulation approach to accurately model high-speed In
_0.53
Ga
_0.47
As/AlAs double-barrier resonant tunneling diodes (RTDs). It relies on the nonequilibrium Green’s function (NEGF) formalism implemented in SILVACO Atlas TCAD quantum simulation package to closely mimic the actual device physics, together with the judicious choice of the material parameters, models, and suitable discretization of the associated epitaxial layer structure. The validity of the approach was proved by comparing simulated data with experimental measurements resulting from fabricated micrometer-sized RTD devices featuring two different epitaxially grown layer stacks. Our results show that the simulation software can correctly compute the peak current density
${J} _{p}$
, peak voltage
${V} _{p}$
, and the valley-to-peak voltage difference
$\Delta {V}$
=
${V} _{v} - {V} _{p}$
associated with the negative differential resistance (NDR) region of the RTD heterostructure static current density–voltage (
${J}$
–
${V}$
) characteristic at room temperature (RT), all of which are key parameters in the design of these devices for use in oscillator circuits. We believe that this work will now help in optimizing the RTD epitaxial structure to maximize its radio-frequency (RF) power performance, accelerating developments in the rapidly evolving RTD technology for emerging applications, including next-generation ultra-broadband short-range wireless communication links and high-resolution imaging systems.