Novel Radiation Hardened Magnetic Full Adder Using Spin-Orbit Torque for Multinode Upset

Spintronic-based integrated circuits have been extensively explored as viable contenders for space use since magnetic tunnel junctions (MTJs) are intrinsically immune to radiation effects. On the other hand, their complementary metal–oxide semiconductor (CMOS) peripheral circuitry is still susceptible to radiation-induced single-event upset (SEU) and multinode upset (MNU) caused by charge sharing. It results in localized ionization and flips the data state of memory cells or other logic circuits. To ensure a fault-free operation, this letter proposes a novel radiation-hardened (RH) CMOS peripheral circuitry for a magnetic full adder (MFA) using spin-orbit torque MTJs. The circuit can recover from SEUs as well as MNUs regardless of the accumulated charge. Moreover, the read time and read energy of the circuit are improved by 17.6% and 64%, respectively, when compared to the previously reported RH MFA.