Partly Semiconductor Covered Vane Fast Magnetron

Alterations in the structure of a magnetron, e.g., the A6 relativistic magnetron, are proposed, which considerably increase the device’s build-up speed. We cover the magnetron vane surfaces with semiconductor layers of nonzero electric conductivity, with an exact geometrical design. Semiconductor layers with considerable mechanical strength also provide excellent shielding for the vanes against the high-energy relativistic electrons’ bombardment. The novel structure introduces several new free parameters to the magnetron design procedure and considerably increases the design flexibility. A multistage exact optimization procedure, performed by extensive computer simulations, shows that applying silicon carbide layers with proper geometrical design doubles the build-up speed. In a general trend, we also indicate that adding semiconductor layers with nonzero electric conductivity to the magnetron vanes’ surfaces typically fastens the system by reducing the build-up transient time. It is verified that the insertion of conductivity to the vanes’ bodies with the proper design of shape and depth can increase the mode frequencies, build-up speed, and strength against electrons bombardment, saving the output amplitude. Finally, as shown by the simulation results data, the system behavior is analyzed theoretically.