Temperature Coefficients of Quaternary GaxIn1–xAsySb1–y Thermophotovoltaic Cells

We have theoretically reported the cell temperature (
${T}_{C}$
)-dependent structure and performances for experimentally available n-on-p Ga
_x
${\text{In}}_{1 -{x}}$
As
_y
${\text{Sb}}_{1 -{y}}$
thermophotovoltaic (TPV) cells with a bandgap at room temperature (
${E}_{g,\text{RT}}$
) in the range of 0.50–0.60 eV. It is shown here that
${V}_{\text{OC}}$
and all structure parameters, e.g., active layer thickness and grid separation, of formed cells present a linearly
${T}_{C}$
-relying reduction, while a nonlinear evolution is traced for
${J}_{\text{SC}}$
and efficiency. Importantly, it is further observed that all coefficients desired for the modeling of
${T}_{C}$
-dependent evolution are
${E}_{g,\text{RT}}$
-dependent and can be reasonably yet uniformly modeled by an
${E}_{g,\text{RT}}$
-based cubic function. This provides an effective method to phenomenologically correlate the optimum structure and performances of Ga
_x
${\text{In}}_{1 -{x}}$
As
_y
${\text{Sb}}_{1 -{y}}$
TPV cell at room temperature with its counterpart beyond room temperature.