Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications

A method to determine the breakdown position in short channel nMOSFETs is introduced. We find that soft breakdown occurs exclusively in the transistor channel, while the hardest circuit-killing breakdowns occur above the source and drain extension regions. Since these breakdowns make up only a small fraction of all breakdowns, a relaxation of the reliability specification is possible.