Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs

Growth of ultrahigh carbon-doped p-type InGaAs lattice matched to InP by chemical beam epitaxy (CBE) using carbon tetrabromide (CBr/sub 4/) as a doping source was investigated. Effects of growth temperature, group V supply pressure, and CBr/sub 4/ supply pressure on growth rate, composition, mobility, and hole concentration of carbon-doped InGaAs were studied. Ultrahigh net hole concentration and room-temperature mobility of 2 /spl times/ 10/sup 20//cm/sup 3/ and 33 cm/sup 2//V/spl middot/sec, respectively, were achieved. Mobility of the ultrahigh carbon-doped InGaAs using CBr/sub 4/ compared favorably to those of CBE grown carbon-doped InGaAs using carbon tetrachloride (CCl/sub 4/) and molecular beam epitaxy grown beryllium (Be)-doped InGaAs grown at low temperature. The highly carbon-doped InGaAs layers grown by CBE using CBr/sub 4/ as a doping source showed a negligible hydrogen passivation effect and were used for the growth of high-performance, highly carbon-doped base InP/InGaAs heterojunction bipolar transistor epitaxial layer structures.