Experimental investigation of linear amplification characteristics of radio-frequency thin-film SOI power MOSFETs

Linear amplification characteristics of RF thin-film SOI power MOSFETs have been investigated under /spl pi//4 shift quadrature phase shift keying (QPSK) modulation. They were found to depend on both the gate and drain bias conditions. There are optimum bias conditions which give the best linear amplification characteristics. They were also found to depend on the pattern layout and gate electrode resistivity. A shorter finger length and lower gate resistance resulted in good linear amplification characteristics. The linear amplification characteristics were independent of the substrate resistivity.