Low frequency noise versus temperature spectroscopy of recently designed Ge JFETs

During the investigation of cryogenic properties of recently developed Ge JFETs we have applied the technique known in literature as low frequency noise versus temperature spectroscopy (LFN versus T). Using this method we have determined the energy levels of traps associated to Lorentzian noise found in the 30 to 40 K temperature range. To perform this task we have developed a computer-controlled experimental setup able to set the temperature within /spl plusmn/5 mK in the range 4 to 300 K during a spectral noise measurement. An approach for the calculation of the uncertainties that affect the evaluation of traps parameter is presented.