Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate

This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (V
_ds
) of 30 V, which was confirmed with combination of a top-side view using a CMOS sensor camera and a back-side view using a silicon-intensified CCD. As V
_ds
was increased to 48 V, color change from low-intensity red to high-intensity white was accompanied with shift of the location from the gate to the drain edge. The changes in the EL are attributed to a shift of the high electric field from the gate to the drain electrode and a concentration of electric field near the drain edge.