1/f noise in GaAs filaments

A typical 1/f noise is excited in GaAs filament with the Hooge noise parameter of about alpha /sub H/=2*10/sup -3/. The noise level increases in proportion to the square of the terminal voltage, and decreases approximately in inverse proportion to the total number of carriers within the device. A transition from the typical 1/f noise characteristics to the diffusion noise characteristics of MESFETs was observed when the electric field was increased above 1 kV/cm. The noise parameters were also investigated as a function of the device width between 2 and 200 mu m. Deep levels within the n-GaAs active layer and the high electric field are the main factors of the nonideal 1/f characteristics.<
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