Low threshold current density operation (J/sub th/ = 340A/cm/sup 2/) of GaInNAs/GaAs quantum well lasers grown by metalorganic chemical vapor deposition

We have achieved the lowest threshold current density of 340 A/cm/sup 2/ with a high characteristic temperature of over 200 K in 1.25 /spl mu/m GaInNAs/GaAs lasers grown by MOCVD. A threshold current density per well of 170 A/cm/sup 2/ is the record low value for 1.2/spl sim/1.3 /spl mu/m GaInNAs lasers.