Statistical Study of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress

Degradation of flexible low-temperature poly-Si thin film transistors (TFTs) under dynamic bending cycles is investigated with statistical method.
$I_{\mathrm{ ON}}$
degradation data of different bending cycles and bending conditions are compared to five different statistical distribution models, and it is determined that the Gamma distribution best fits degradation data. Based on the model, the reliability of TFTs under a given stress condition can be evaluated under two typical application scenarios: (1) reliability prediction for large bending cycles; (2) reliability evaluation based on stress test with limited sample size.