185 GHz monolithic amplifier in InGaAs-InAlAs transferred-substrate HBT technology

We report a single-stage tuned amplifier that exhibits a peak small signal gain of 3.0 dB at 185 GHz. To the best of our knowledge, this is the first reported HBT result for a tuned amplifier at this frequency, and the gain-per-stage compares favorably with results from HEMT technologies. The amplifier was designed in a transferred-substrate HBT technology that has exhibited record values of extrapolated f/sub max/ (>1 THz).