A simple bias dependant LF FET noise model for CAD

Extensive multi-bias low frequency noise (LFN) measurements were performed on MESFET, HEMT and InP HEMT devices in order to obtain a simple bias dependent LF noise model usable in CAD tools and consistent with small and large signal models and high frequency noise models. The model was experimentally evaluated with a 10 GHz DRO and good correspondence was obtained between the modelled and measured LFN.