MEMS high Q microwave inductors using solder surface tension self-assembly

We present microwave inductors of 1.5 to 2.5 nH fabricated out-of-plane by a self-assembly process. The consequent de-coupling from the substrate allows improved Q (from 4 to 20) and frequency of maximum Q (from 0.5 GHz to 3 GHz) on low resistivity silicon substrates.