Modelling and simulations of nanostructures for Shipley SPR505A resist using PRIME process

The Positive Resist Image by dry Etching (PRIME) process is a high resolution lithography system incorporating electron beam exposure, silylation and dry development. The process steps in PRIME with Shipley SPR505A resist have been modeled and simulations of nanostructures (50nm lines/spaces, 30nm single line) has been presented. The silylation process step in PRIME with SPR505A resist has been experimentally characterized using FT-IR spectroscopy.