Modeling the limits of gate oxide scaling with a Schrodinger-based method of direct tunneling gate currents of nanoscale MOSFETs

Calculates gate currents of nanoscale MOSFETs with ultrathin gate oxides for different gate and drain biases by directly solving the Schrodinger, electron-Boltzmann, Poisson and hole-continuity equations. Computations give rise to a subband structure that is populated using the calculated distribution function. The resulting tunneling current versus gate voltage curves show oscillatory structure which reflects quantum effects.