Enhanced subthreshold leakage current due to impact ionization in deep sub-100nm N-channel double-gate MOSFETs

We reported the effect of impact ionization on the subthreshold leakage current in N-channel double-gate MOSFETs. In this paper, detailed analysis for the enhanced subthreshold leakage current due to impact ionization and its physical mechanism are discussed. Furthermore, the effect of the leakage current on the device scaling toward deep sub-100nm is also discussed.