Recessed multi-gate SOI MOSFET in deep decananometer regime

A recessed multi-gate SOI MOSFET has been presented. Due to the confinement finite volume and strong coupling between the three-wide folded gate and back gate. the electrical field inside the silicon film is smoothed and the carrier mobility is enhanced. Thus. the controllability of the gate is improved so that the ultrashort channel effect/DIBL and ultranarrow width effect are further suppressed. in addition, the higher transconductance with higher integration density. the near ideal subthreshold slope, the postponed single latch breakdown. and the suppressed self-heating effect have been also demonstrated for the recessed multi-gate SOI MOSFET. We believed that if the ultra-thin silicon film, thin BOX and novel material are exploited, the decananometer multi-gate device with good performance can be realized in the nearest future.