Dynamic Write VMIN and Yield Estimation for Nanoscale SRAMs

The dynamic write-access operation in an SRAM has a long-tailed distribution that sets the threshold for write-access failures. The distribution takes a long time to evaluate since rare failure events lie in its long and heavily skewed tail. Moreover, advanced FinFET technologies are becoming increasingly reliant on assist techniques to resolve these rare failures in the tail for improved dynamic performance and stability. In this work, we present various analytical approaches that work well in both super-threshold and subthreshold regions of operation to quickly determine the write-access failure probability. For FinFET based SRAMs, we present a modified sensitivity analysis-based method to evaluate the write-access operation distribution and discuss the evaluation of contention-limited write-access failures. The impact of various write-assist techniques on the performance and stability of FinFET SRAMs is also discussed. All simulations are performed using commercial 65nm bulk planar and 12nm FinFET technologies.