Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n/sup +/-p-well diodes

A procedure is proposed to extract the thermal generation lifetime (/spl tau//sub g/) profile in the depletion region of shallow n/sup +/-p-well junctions surrounded by shallow trench isolation from the generation current density. This is achieved by taking account of the electric field enhancement factor. As will be shown, a more realistic /spl tau//sub g/ profile is obtained that better reflects the trap density profile, corresponding with the deep boron ion implantation-related extended defects.