Physics and applications of the Schottky junction transistor

This paper presents the results from numerical simulations of a novel subthreshold transistor configuration. The device uses the input current from a forward-biased Schottky gate to control the larger current flowing in a depleted channel. Analytical approximations are used to derive the current gain of the transistor. The numerical simulations confirm the analytical derivation and show that a 0.5 /spl mu/m gate length device would have a cutoff frequency approaching 10 GHz for supply voltages less than 0.5 V. Possible applications of the device in the areas of micropower analog circuits and ULSI logic are discussed.