Monolithic InGaAsP optoelectronic devices with silicon electronics

The interface between optoelectronic devices and microelectronic circuits is the crucial component in the further development of optical communications, calling for inexpensive mass-produced solutions. We present a procedure for how these diverse elements can be monolithically integrated. A stringent requirement is the compatibility with existing fabrication techniques of microelectronic circuits in silicon. We demonstrate the feasibility of our method by the monolithic integration of a photodetector, based on InGaAs-InP, with a three-stage MOS amplifier on a Si substrate in [100] crystallographic orientation. Basic performance figures (dark current, sensitivity) are comparable to those obtained with test structures on the native InP substrate. We show that the developed technologies can be extended to light-emitting diodes and laser structures displaying efficient electroluminescence.