Finger Gate Vacuum Channel Field Emission Transistors: Performance and Sensitivity Analysis

In the current research, for the first time, Nano-scale finger gate vacuum channel field emission transistor (FGVFET) scaling down and its limitations considering electrical characteristics are studied. The FGVFET with different cathode electrode materials, channel dimensions, and finger widths is considered and the impacts of these structural and physical changes on the key indicators of the device are assessed to achieve a comprehensive design guideline. The sensitivity analysis reveals that the channel height modification by changing gate-anode oxide and cathode–gate oxide thicknesses can be assumed as the most significant design factor in the determination of ON–OFF-state currents. The results indicate that the gate leakage current as a salient parameter in device performance is dependent on the cathode material, channel depth, and height. Furthermore, investigating cutoff frequency as the prominent factor in high-speed applications indicates that cathode–gate oxide thickness may fundamentally modify this factor.