Modelling RF interference effects in integrated circuits

The disturbance effects in complex electronic systems, subjected to a high power microwave (HPM), continuous wave (CW) or pulse irradiation, show a conversion of the injected high frequency (HF) out-of-band signal to a low frequency (LF) inband signal. In this paper, a behavioural model is presented that combines HF and LF subcircuits to predict the effect of radio frequency interference (RFI) on linear integrated circuits. The model is constructed from detailed measurements and manufacturers' data, and can be used to determine the upset mechanism in analogue systems subjected to RFI.