Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

In this article, the Au-free complementary metal oxide semiconductor (CMOS) transistor compatible AlGaN-channel high-electron-mobility transistors (HEMTs) on silicon substrate with 2-kV forward and reverse blocking voltages have been reported. Due to the designed AlGaN epitaxial layers, breakdown voltages (BVs) of the conventional AlGaN-channel HEMTs with
$L_{GD} =5$
/10/15/ 20/
$25~\mu \text{m}$
are 420/1070/1590/1920/2000 V respectively, and the values are increased to 760/1420/1980/1990/2000 V by using Schottky-drain technique. The reverse-blocking HEMTs demonstrate reverse blocking voltages of −790/−1300/−1810/−2000 V for
${L}_{GD}=5$
/10/15/
$20~\mu \text{m}$
. Meanwhile, the conventional HEMT power figure-of-merit (FOM) of 397 MW/cm
²
is the highest FOM for AlGaN-channel HEMTs on silicon, and the Schottky-drain HEMT forward FOM of 384 MW/cm
²
and reverse FOM of 321 MW/cm
²
are the highest FOM values for all GaN-based reverse-blocking HEMTs on silicon.