Optoelectronic devices based on (AlGaIn)N structures on GaN crystals

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. One of the most important problems in (AlGaIn)N technology is lack of easily available lattice-matched substrate for epitaxial growth. The author shows the advantages of using high pressure (HP) bulk crystals as substrates for nitride epitaxy over sapphire or SiC. The experimental results are presented from atomic force microscopy (AFM), X-ray diffraction (XRD) rocking curves, transmission electron microscopy (TEM), photoluminescence (PL), and electroluminescence (EL) of a blue laser.