Development of an etchant for selectively etching TiWN/sub x/ in the presence of electroplated 95%Pb-5%Sn solder

Shrinking die sizes and increasing I/O density is motivating the push toward flip chip packages. A flip chip interconnection system with a under bump metallurgy stack containing sputtered TiWN/sub X//sputtered Cu/electroplated Cu stud/electroplated 95%Pb-5%Sn was developed. An important step in the above process is the selective etching of the sputtered Cu bus layer and the TiWN/sub X/ barrier layer, in the presence of the Pb-Sn solder. The Cu bus layer was selectively etched using commercial etchants. However, no commercial etchants were available for selectively etching the TiWN/sub X/ layer, H/sub 2/O/sub 2/-NH/sub 4/OH based etching systems, popularly known as Standard Clean-1 cleaning solutions, have been extensively used to clean silicon wafers in front end wafer fabrication where only trace metal contamination exists. Since metals like lead, copper, titanium, tin and tungsten catalyze the heterogeneous decomposition of the peroxide, the unstable H/sub 2/O/sub 2/-NH/sub 4/OH based etching systems are rarely used to etch metal films. In this paper the development of a H/sub 2/O/sub 2/-NH/sub 4/OH based etchant to selectively etch the sputtered TiWN/sub X/ films in the presence of electroplated 95%Pb-5%Sn solder bumps is discussed. A 2/sup 3/ full factorial experiment with mid point was conducted to establish the etchant composition, as well as process temperature, that give satisfactory responses with respect to etch time, permissable undercut of the Cu stud (caused by the NH/sub 4/OH), and acceptable bump shape after reflow. Statistical analysis was used to understand the significant factors influencing the etch rate and undercut. An etchant containing 6% by volume of 30%-H/sub 2/O/sub 2/ and 0.75% by volume of 30%-NH/sub 4/OH operated at a temperature of 37/spl deg/C was found to give satisfactory results.