A monolithic Si PCS-CDMA power amplifier with 30% PAE at 1.9 GHz using a novel biasing scheme

A monolithic Si personal-communication system-CDMA power amplifier (PA) capable of delivering 28.2-dBm output power with 30% power-added efficiency and -45-dBc adjacent-channel-power ratio at 1.9 GHz and 3.6-V supply voltage is presented for the first time in this paper. The PA implemented in a 30-GHz BiCMOS process incorporates a novel impedance-controllable biasing scheme to control the class of operation and bias impedance of the output stage. Both simulated and measured results are presented for comparison.