Self-assembled III-V quantum dots: potential for silicon optoelectronics

The basic optoelectronic properties of self-forming InGaAs-InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs-InGaAs QDs grown on dislocation arrays are discussed in terms of an enabling technology which will allow optoelectronics integration with silicon technology.