Advanced design of high linearity, low noise amplifier for WLAN using a SiGe BiCMOS technology

In this paper, we present the design of an integrated low noise amplifier (LNA) for WLAN applications in the 6 GHz range using a SiGe BiCMOS technology. The SiGe HBTs feature a cut-off frequency f/sub t/ higher than 40 GHz and maximum oscillation frequency f/sub max/ higher than 50 GHz. The design of some of the passive devices of the circuit has been achieved from 2D electromagnetic simulations. We have observed quite good agreement between measurements and simulation, even in the nonlinear regime. The LNA exhibits a power gain larger than 15 dB from 5 GHz to 6 GHz and 2 GHz bandwidth, and a noise figure lower than 2 dB. It exhibits a 1 dB input referred compression point of more than -18 dBm and a 0 dBm input referred third order intercept point.