Impurity doping effects on grown-in defects in silicon

The threshold change of equilibrium concentration of vacancies for reported void defect density change due to substitutional B and Sb doping are estimated. Changing point defect concentration by more than 10% for either B or Sb changes the void density. Thus, the threshold impurity concentration for changing void density is predictable for various dopants. The mechanism of void density change by the change of vacancy equilibrium concentration is discussed.