Characterization of defects in LT-GaAs using a novel method based on thin LT-layers incorporated into pin diodes

A thin layer of low temperature grown GaAs (LT-GaAs) incorporated in the intrinsic layer of a pin diode was used, to investigate the deep electronic defect centers in LT-GaAs, DC and AC n-channel conductance measurements and electro-absorption experiments as a function of reverse bias provide important information about the density, the energy distribution and the charging and discharging kinetics of the deep centers in the energy gap.