Electron irradiation induced defects in n-GaN

Irradiation by high energy gamma rays or electrons is particularly effective in introducing point defects-the simplest of all defects, it provides a convenient tool for producing native defects due to elastic displacement of host atoms. We have used deep level transient spectroscopy (DLTS) to investigate the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrowth technique during high-energy electron irradiation from a /sup 90/Sr radionuclide source. The results indicate that the major electron irradiation induced defect labelled ER3 is not a single defect level but is made up of at least three defect levels. Apart from these shallower defects a set of at least four defects centered about 0.90/spl plusmn/0.15 eV are observed.