Deep centers in as-grown and electron-irradiated n-GaN

Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (EI) creates V/sub N/-related centers with activation energy E/sub T/=0.06 eV and a center with E/sub T/=0.85 eV, which might be related to N/sub I/. Deep centers in as-grown materials show a close connection with high dislocation densities and some of them indeed behave like "line-defects". Based on comparisons with EI-induced centers, some deep centers in as-grown materials are identified as possible point defects.