Selectively excited blue luminescence in heavily Mg doped p-type GaN

The emission at /spl sim/2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has been studied by selective excitation using a dye laser tunable between 2.7-3.0 eV. The peak position and intensity of the BL are found to exhibit an unusual dependence on the excitation photon energy. We have explained our results with a shallow-donor and deep-acceptors pair recombination model which includes potential fluctuations induced by heavy doping. We found a "critical energy" of /spl sim/2.8 eV for the BL. Electron-hole pairs with energies above this energy are able to achieve quasi-thermal equilibrium while those with energies below 2.8 eV are strongly "localized".