Broad-band emission from a multiple asymmetric quantum-well light-emitting diode

The authors demonstrate broadband light-emitting diode (LED) emission, with a full-width-at-half-maximum (FWHM) values >100 nm, based on concurrent multiple-state transitions in a single active layer containing two asymmetric quantum wells in the GaAs/AlGaAs material system. This spectral width is much broader (by a factor of 2.5) than that for commercial edge-emitting LEDs in the GaAs/AlGaAs system. The LED device is well suited for broadband source applications in wavelength-multiplexing-based, fibre-optic sensor network systems.<
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