A new method of threshold voltage extraction via MOSFET gate-to-substrate capacitance measurement

A new method to extract MOSFET threshold voltage V/sub T/ by measurement of the gate-to-substrate capacitance C/sub gb/ of the transistor is presented. Unlike existing extraction methods based on I-V data, the measurement of C/sub gb/ does not require DC drain current to flow between drain nd source thus eliminating the effects of source and drain series resistance R/sub S/D/ , and at the same time, retains a symmetrical potential profile across the channel. Experimental and simulation results on devices with different sizes are presented to justify the proposed method.