High drive-current electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage

A novel electrically induced body dynamic threshold metal oxide semiconductor (EIB-DTMOS) is proposed where the body is electrically induced by substrate bias and its high performance is demonstrated by experiments and simulations. EIB-DTMOS achieves a large body effect and a low V/sub th/ at the same time. The upper limit of the supply voltage of the EIB-DTMOS is higher than that of a conventional DTMOS, because the forward biased p-n junction leakage current of the EIB-DTMOS is lower. Among several DTMOSs, the accumulation mode EIB-DTMOS shows the highest drive-current at fixed off-current due to a large V/sub th/ Shift (or large back gate capacitance) and a suppressed short channel effect.