Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

We have newly developed an advanced SOI p-MOSFET with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFETs have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFETs. It is found that the hole mobility is enhanced in strained-SOI p-MOSFETs, compared to the universal hole mobility in an inversion layer and the mobility of control SOI p-MOSFETs. The enhancement of the drive current has been kept constant down to 0.3 /spl mu/m of the effective channel length.