Hydrogenated amorphous silicon-germanium PIN X-ray detector

The hydrogenated amorphous silicon-germanium (a-Si/sub 1-x/Ge/sub x/:H) pin X-ray detector has been fabricated successfully. It is found by introducing germanium into the amorphous silicon film, the X-ray detection efficiency is almost twice improved. This is due to the fact that the energy gap of a-Si/sub 1-x/Ge/sub x/:H is smaller than that of a-Si:H.