Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O/sub 2/ mixed high-density microwave-excited plasma at 400/spl deg/C. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap density and bulk charge enough to replace thermally grown silicon oxide.