Optical switching operation due to field induced refractive-index variation in 1.3 mu m GaInAsP/InP MQW structures

A GaInAsP/InP MQW intersectional switch using field-induced refractive index variation was fabricated and operated for the first time. Refractive index variation for TE polarized light was found to be 2 times larger than that for TM polarized one, and was estimated to be 0.45% in the QW layer at the bias voltage of -9 V.<
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